Static Parameter tests
High Voltage (HV) test generator
Our HV test generator performs high voltage breakdown and low leakage current measurements. The generator has a high voltage forcing capability of up to 3000V and has a current measure capability with a picoampere resolution. The high voltage sources and control elements are mounted in the Mostrak-2 system mainframe with a remote test head mounted on the handler contact (or a serial test head for wafer probe).
The HV has a programmable voltage clamp and a programmable current clamp to prevent excessive over voltages and over currents on the device under test. The generator has also been designed to give the fastest test time with a dv/dt ramp control to prevent excessive charging currents when measuring leakage currents of capacitive junctions such as the gate of a MOSFET.
Low Voltage (LV) test generator
The Low Voltage test generator performs performs low voltage on-state and active region tests on power semiconductor devices. The test generator has two independent voltage sources for the drain and gate supplies which are a bi-polar +/-50V 200A output to the Drain/Collector terminal and a +/-50V 10A Gate/Base output.
The LV generator is expandable to 400A and 600A.
Combined HV/LV generator
The HVLV 3kV 200A test generator assembly is very popular for end of line QA testing. It performs high voltage off-state tests and low voltage on-state and active region tests. The generator has a unipolar 3kV source with a floating +/-20V Vx generator for the HV tests and a bi-polar +/-50V 200A output to the Drain/Collector terminal and a +/-50V 10A Gate/Base output for the LV tests.
The HV/LV generator is expandable to 400A and 600A.
Dynamic Switching tests
Our Dynamic Switching test generators specifically meet the needs of the latest fast switching, high power wide bandgap devices, and are used at every stage of production including singulated die testing/sorting through to packaged device and discrete module testing.
The following test modes are available on our DS5 tester:
1.2kV/1000A dynamic switch tests
Single- and double-pulse clamped inductive load testing up to 1000A
Diode recovery test up to 1000A
Short circuit testing up to 2000A
All critical test circuitry is contained in a compact, remote, low inductance test head, designed for ‘hard dock’ handler mounting with minimal interface distance.
High speed test algorithms and data processing allow full dynamic characterisation in under 200 ms, and combinations of tests at handler compatible rates.
Waveform storage with 1 ns resolution gives on-screen switching waveforms.
Transient Thermal tests
The bonding of the chip to the package substrate is a critical stage in the assembly of any power discrete device. In order to verify the integrity of the bond a transient thermal test is performed.
A temperature sensitive device parameter is measured using a calibration pulse, a controlled high power pulse is then applied and the temperature sensitive parameter is re-measured immediately following the end of the power pulse. The deference of the device temperature for a given power pulse is used to determine the transient thermal resistance of the package and to verify the mount down process.
For a MOSFET device, the on-state voltage of the body drain diode (VSD) is usually used to determine the junction temperature. The power pulse is then applied to the device in the active state and the deference in VSD (delta VSD or dVSD) is used to determine the temperature rise of the junction.
The ipTEST thermal test generator (FB) supplies DC power (to 1000 W, up to 300 V and up to 100 A) the gate/base drive (30 V, 10 A compliance) and the precision calibration and measurement systems all controlled on a separate test site from a local micro-controller.
Avalanche Energy tests
Unclamped inductive switching (UIS or UIL) is an avalanche test typically performed to verify the ruggedness of power MOSFETs and the associated rectifier diodes. ipTEST have a dedicated UIS generator.
The UIS test generator performs avalanche testing at currents up to 200 A, and avalanche voltages to 2500 V. The unit is designed to work with the latest generation of high current, low voltage MOSFETs with an architecture capable of driving 200 A on MOSFETs with V(BR)DSS as low as 12 V. The UIS may be easily added to an existing test system.
Fully programmable
Fully programmable load inductor from 12.5 uH to 25 mH.
Additional programmable custom inductors available to 300 mH.
Fully programmable gate drive to ±20 V.
A programmable output matrix for various package pin configurations.
Programmable set of voltage and current window comparators for high speed production testing.
A programmable high resolution waveform capture unit to analyse waveforms and measure the avalanche energy.
A programmable energy cut off mode to guarantee the correct avalanche energy regardless of the tester losses.
Over current and selectable over voltage clamp circuits to prevent damage to contacts and probe needles on device failure.
Programmable output matrix for various pin configurations.
Built in Kelvin and leakage test circuits.